氧分压对蒸发氧化铝薄膜性能的影响

Laser Damage Pub Date : 2021-10-12 DOI:10.1117/12.2599213
Tsion Teklemarim, C. Stolz, M. Brophy, Michael Pierce, P. Kupinski
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引用次数: 1

摘要

采用分光光度法和干涉法相结合的表征方法,研究了氧分压对电子束蒸发制备的氧化铝薄膜性能的影响。随着氧分压的增加,观察到折射率的降低,以及一旦暴露于环境条件下,向较低张力薄膜的转变。拉伸应力的降低与薄膜中的含水量有关。在沉积过程中增加氧分压改善了薄膜的化学计量、吸收和351nm激光诱导损伤阈值(LIDT)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The influence of oxygen partial pressure on the properties of evaporated alumina thin films
The effect of oxygen partial pressure on the properties of Al2O3 films deposited by electron beam evaporation has been investigated through a combination of spectrophotometric and interferometric characterization techniques. As oxygen partial pressure increases, a decrease in the refractive index is observed, as well as a shift towards less tensile films once they are exposed to ambient conditions. This decrease in tensile stress was observed to be correlated with water content in the films. Increasing oxygen partial pressure during deposition improved film stoichiometry, absorption, and laser induced damage threshold (LIDT) at 351 nm.
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