基于超分馏实验设计的高频LDMOS器件统计优化

Nineteenth IEEE/CPMT International Electronics Manufacturing Technology Symposium Pub Date : 1996-10-14 DOI:10.1109/IEMT.1996.559788

R. Elias, G. Ma, L. Golonka

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引用次数: 1

摘要

利用先进的统计技术开发了亚微米，2ghz横向扩散金属氧化物半导体(LDMOS)晶体管的多变量器件表征。一个12变量，1/128分数阶乘的分辨率等级IV被设计和执行，以表征该器件的阈值电压，接触电阻和泄漏。介绍了摩托罗拉“10/spl次/”产品开发计划，并讨论了超分馏实验设计对这一挑战和其他“上市时间”挑战的贡献。

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Statistical optimization of high frequency LDMOS devices via hyper-fractionated experimental designs

Advanced statistical techniques are utilized to develop a multivariable device characterization of a submicron, two gigahertz laterally diffused metal oxide semiconductor (LDMOS) transistor. A twelve variable, 1/128th fractional factorial of resolution class IV is designed and executed to characterize this device in terms of threshold voltage, contact resistance, and leakages. The Motorola "10/spl times/" Product Development Initiative is presented and the contribution of hyper-fractionated experimental designs to this and other "time to market" challenges is discussed.

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来源期刊

Nineteenth IEEE/CPMT International Electronics Manufacturing Technology Symposium

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