具有高效宽条纹发射器的6.3W InGaN激光二极管阵列

IEEE Photonic Society 24th Annual Meeting Pub Date : 2011-12-22 DOI:10.1109/PHO.2011.6110783

K. Samonji, S. Yoshida, H. Hagino, K. Yamanaka, S. Takigawa

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引用次数: 4

摘要

在连续波工作下，展示了一种高功率为6.3W的多条纹ingan基激光二极管(LD)阵列。作为InGaN LD阵列的世界最高功率工作归功于热优化布局设计，利用了高效的发射器。

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6.3W InGaN laser diode array with highly efficient wide-striped emitters

A multi-striped InGaN-based laser diode (LD) array is demonstrated at a high power of 6.3W under continuous wave operation. The world highest power operation as InGaN LD array is attributed to thermally optimized layout design taking an advantage of highly efficient emitters.

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IEEE Photonic Society 24th Annual Meeting

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