考虑V/sub / dd/和V/sub / th/作为设计自由度的功率最优中继器插入

Yu Ching Chang, King Ho Tarn, Lei He
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引用次数: 0

摘要

本文首先提出了一种分析式中继器插入方法,该方法在时延约束下优化了单网的功率。该方法在具有时延目标的网络中找到了最优的中继器插入长度、中继器大小和V/sub dd/和V/sub th/电平,与不考虑V/sub dd/和V/sub th/优化的方法相比,降低了50%以上的功耗。本工作进一步展示了在全芯片级中继器插入中使用多个V/sub / dd/和V/sub / th/电平时的省电效果。与ITRS建议的单V/sub dd/和V/sub th/相比,优化后的双V/sub dd/和双V/sub th/在130nm、90nm和65nm技术节点上的整体互连功耗分别降低了47%、28%和13%,但额外的V/sub dd/或V/sub th/水平只带来了微小的改善。我们还表明,与逻辑电路需要双V/sub /相比,优化的单V/sub /降低互连功率几乎与双V/sub /一样有效。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Power-optimal repeater insertion considering V/sub dd/ and V/sub th/ as design freedoms
This work first presents an analytical repeater insertion method which optimizes power under delay constraint for a single net. This method finds the optimal repeater insertion lengths, repeater sizes, and V/sub dd/ and V/sub th/ levels for a net with a delay target, and it reduces more than 50% power over a previous work which does not consider V/sub dd/ and V/sub th/ optimization. This work further presents the power saving when multiple V/sub dd/ and V/sub th/ levels are used in repeater insertion at the full-chip level. Compared to the case with single V/sub dd/ and V/sub th/ suggested by ITRS, optimized dual V/sub dd/ and dual V/sub th/ reduce overall global interconnect power by 47%, 28% and 13% for 130nm, 90nm and 65nm technology nodes, respectively, but extra V/sub dd/ or V/sub th/ levels only give marginal improvement. We also show that an optimized single V/sub th/ reduce interconnect power almost as effective as dual-V/sub th/ does, in contrast to the need of dual V/sub th/ for logic circuits.
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