High-speed III-V devices for millimeter-wave receiver applications (Invited)

We developed high-speed III-V devices for millimeter-wave receiver applications as InP-based high electron mobility transistors (HEMTs) that had a cavity structure and zero-bias GaAsSb-based heterojunction backward diodes. A high cutoff frequency (fT) of 517 GHz and minimum noise figure (NFmin) of 0.71 dB at 94 GHz were achieved for the InP-based HEMTs, even after the passivation process, by adopting the cavity structure. Since GaAsSb-based diodes that are based on p+-GaAsSb/i-InAlAs/n-InGaAs are mostly lattice-matched to InP, they can be easily integrated with InP-based low-noise amplifiers (LNAs). They indicated a sensitivity of 20,400 V/W at 94 GHz. By integrating the backward diodes with LNAs, highly sensitive receiver MMICs can be fabricated.