一种具有垂直双resruf层的新型SOI沟槽LDMOS

2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC) Pub Date : 2017-10-01 DOI:10.1109/EDSSC.2017.8126423

Jianmei Lei, Shengdong Hu, Song Wang, Zhi Lin

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引用次数: 0

摘要

本文研究了一种新型的具有垂直双栅极的SOI沟槽LDMOS。在氧化物沟槽旁插入p型硅柱作为垂直双RESURF层，可以有效地调制电子场，提高漂移区掺杂浓度。漏极n+区延伸至埋地氧化层表面，缩短了载流子在高阻n-漂移区的运动路径。得到了比导通电阻与击穿电压的显著优化关系。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A novel SOI trench LDMOS with vertical double-RESRUF layer

A novel SOI trench LDMOS with vertical double-RESURF is studied in this paper. A p-type silicon pillar is inserted beside the oxide trench as a vertical double RESURF layer, which can effectively modulate the electronic field and enhance the doping concentration in the drift region. The drain n+ region extends to the surface of buried oxide layer, shortening the motion-path in the high-resistance n− drift region for the carriers. A significantly optimized dependence of specific on-resistance on breakdown voltage is obtained.

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来源期刊

2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)

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