大功率IGBT技术的发展分析与性能测试

2020 3rd International Conference on Advanced Electronic Materials, Computers and Software Engineering (AEMCSE) Pub Date : 2020-04-01 DOI:10.1109/AEMCSE50948.2020.00195

Yong Tang, Bo Wang, Yonghong Chen

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引用次数: 0

摘要

分析了大功率IGBT的技术发展，指出了最新一代沟挡IGBT的结构改进和性能改进。设计了一种实验电路，对目前应用比较广泛的非扩散管和阻沟式IGBT进行了动、静态性能测试。结果表明，该挡沟装置具有低导通电压、低关断损耗等优点。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Development Analysis and Performance Test of High Power IGBT Technology

This paper analyzes the technical development of high-power IGBT and points out the structural improvement and performance improvement of the latest generation Trenchstop IGBT. An experimental circuit is designed to test the dynamic and static performance of NPT and Trenchstop IGBT which are widely used at present. The results show that Trenchstop devices have the advantages of lower on-voltage and lower off-loss etc.

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来源期刊

2020 3rd International Conference on Advanced Electronic Materials, Computers and Software Engineering (AEMCSE)

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