EDA在暗硅时代的挑战

M. Shafique, S. Garg, J. Henkel, Diana Marculescu
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引用次数: 197

摘要

在连续几代技术中,技术缩放导致了更小、更快的晶体管。然而,晶体管功耗不再与集成密度相称,因此,预计在未来的技术节点中,为了保持在功率预算内,只能同时为多核芯片上的一小部分内核供电。芯片断电的部分被称为暗硅,它为设计界带来了新的挑战和机遇,特别是在暗硅与热、可靠性和可变性相互作用的背景下。在这篇展望文章中,我们描述了这些新的挑战和机遇,并提供了初步的实验证据来支持它们。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The EDA challenges in the dark silicon era
Technology scaling has resulted in smaller and faster transistors in successive technology generations. However, transistor power consumption no longer scales commensurately with integration density and, consequently, it is projected that in future technology nodes it will only be possible to simultaneously power on a fraction of cores on a multi-core chip in order to stay within the power budget. The part of the chip that is powered off is referred to as dark silicon and brings new challenges as well as opportunities for the design community, particularly in the context of the interaction of dark silicon with thermal, reliability and variability concerns. In this perspectives paper we describe these new challenges and opportunities, and provide preliminary experimental evidence in their support.
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