硅上锗光子晶体腔的应变特性

2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI:10.1109/GROUP4.2019.8926125

Chulwon Lee, K. Woo, H. Song, Daegwang Choi, Sunghan Choi, Yong‐Hoon Cho

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引用次数: 0

摘要

提出了硅上单片锗一维光子晶体腔。数值模拟表明，与应变锗纳米结构重叠的空腔模式为Q ~ 100,000。拉曼测量显示，在腔体中心的单轴拉伸应变高达1.5%。

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Strain Property of Germanium Photonic Crystal Cavity on Silicon

Monolithic germanium on silicon 1 dimensional photonic crystal cavity is presented. Numerical simulation shows Q ∼ 100,000 for the cavity mode overlapped with strained germanium nanostructure. Raman measurement shows up to 1.5 % of uniaxial tensile strain at the center of the cavity.

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2019 IEEE 16th International Conference on Group IV Photonics (GFP)

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