4-8 Ghz大功率级联封装GaAs FET放大器

1981 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1981-06-15 DOI:10.1109/MWSYM.1981.1129842

S. Yamamura, M. Shigaki, N. Hidaka, H. Ishikawa, M. Fukuta

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引用次数: 2

摘要

开发了一种4-8 GHz 1w GaAs FET放大器模块，该模块采用6 × 16 × 3.5 mm陶瓷封装，具有6个端子。这些模块可以很容易地直接级联，因为它们具有标准化的接口。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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4-8 Ghz High Power Cascadable Pacraged GaAs FET Amplifier

A 4-8 GHz 1 W GaAs FET amplifier module in a 6 x 16 x 3.5 mm ceramic package with 6 terminals has been developed. The modules can be directly cascaded quite easily since they have standardized interfaces.

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1981 IEEE MTT-S International Microwave Symposium Digest

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