{"title":"一种测量薄膜热导率的新结构","authors":"Qing-shan Song, S. Xia, Shaofeng Chen, Zheng Cui","doi":"10.1109/ICIA.2004.1373323","DOIUrl":null,"url":null,"abstract":"A new microdevice for measuring the thermal conductivity of thin film is presented. It is based on the static-state method, which is widely used and a simple technique for measuring the lateral thermal conductivity of thin film. The device is fabricated using micromachining process, which is 800/spl times/2000/spl mu/m bridge membrane with 30/spl times/100/spl mu/m beams. The heater and thermometer across the bridge membrane through the beams are used to create heat flux and to measure the temperature. On the membrane, heat flux is very uniform and the temperature is evenly distributed, which has been verified by simulation, making the system error smaller than conventional rectangular structure. Silicon nitride thin films with thickness from 0.5/spl mu/m to 2/spl mu/m have been investigated using the technique. The measurement result supports the size effect of the thermal conductivity for thin film.","PeriodicalId":297178,"journal":{"name":"International Conference on Information Acquisition, 2004. Proceedings.","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"A new structure for measuring the thermal conductivity of thin film\",\"authors\":\"Qing-shan Song, S. Xia, Shaofeng Chen, Zheng Cui\",\"doi\":\"10.1109/ICIA.2004.1373323\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new microdevice for measuring the thermal conductivity of thin film is presented. It is based on the static-state method, which is widely used and a simple technique for measuring the lateral thermal conductivity of thin film. The device is fabricated using micromachining process, which is 800/spl times/2000/spl mu/m bridge membrane with 30/spl times/100/spl mu/m beams. The heater and thermometer across the bridge membrane through the beams are used to create heat flux and to measure the temperature. On the membrane, heat flux is very uniform and the temperature is evenly distributed, which has been verified by simulation, making the system error smaller than conventional rectangular structure. Silicon nitride thin films with thickness from 0.5/spl mu/m to 2/spl mu/m have been investigated using the technique. The measurement result supports the size effect of the thermal conductivity for thin film.\",\"PeriodicalId\":297178,\"journal\":{\"name\":\"International Conference on Information Acquisition, 2004. Proceedings.\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-06-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Information Acquisition, 2004. Proceedings.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIA.2004.1373323\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Information Acquisition, 2004. Proceedings.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIA.2004.1373323","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new structure for measuring the thermal conductivity of thin film
A new microdevice for measuring the thermal conductivity of thin film is presented. It is based on the static-state method, which is widely used and a simple technique for measuring the lateral thermal conductivity of thin film. The device is fabricated using micromachining process, which is 800/spl times/2000/spl mu/m bridge membrane with 30/spl times/100/spl mu/m beams. The heater and thermometer across the bridge membrane through the beams are used to create heat flux and to measure the temperature. On the membrane, heat flux is very uniform and the temperature is evenly distributed, which has been verified by simulation, making the system error smaller than conventional rectangular structure. Silicon nitride thin films with thickness from 0.5/spl mu/m to 2/spl mu/m have been investigated using the technique. The measurement result supports the size effect of the thermal conductivity for thin film.
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