{"title":"电子束辐照对氮化镓基发光二极管特性的影响","authors":"Liyuan Yu, Pingjuan Niu, H. Sha","doi":"10.1109/SOPO.2012.6271097","DOIUrl":null,"url":null,"abstract":"Light emitting diodes (LEDs) is an important solid-state light source, which has the advantage of long lifetime and low cost. As a semiconductor photoelectric device, the electron-beam irradiation on LEDs brings the deep level defect acting as the compensation of the chemical doping in LEDs. In this paper the influence of low-energy and low-dose electron-beam irradiation on the GaN-based LEDs has been studied. It is observed that the light intensity of irradiated LEDs emitting increases, and the electronic parameters are mainly unchanged. And the electron beam irradiation mechanism of the experiment results are discussed and analyzed.","PeriodicalId":159850,"journal":{"name":"2012 Symposium on Photonics and Optoelectronics","volume":"3 4","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The Influence of Electron-Beam Irradiation on the Characters of GaN-Based Light Emitting Diodes\",\"authors\":\"Liyuan Yu, Pingjuan Niu, H. Sha\",\"doi\":\"10.1109/SOPO.2012.6271097\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Light emitting diodes (LEDs) is an important solid-state light source, which has the advantage of long lifetime and low cost. As a semiconductor photoelectric device, the electron-beam irradiation on LEDs brings the deep level defect acting as the compensation of the chemical doping in LEDs. In this paper the influence of low-energy and low-dose electron-beam irradiation on the GaN-based LEDs has been studied. It is observed that the light intensity of irradiated LEDs emitting increases, and the electronic parameters are mainly unchanged. And the electron beam irradiation mechanism of the experiment results are discussed and analyzed.\",\"PeriodicalId\":159850,\"journal\":{\"name\":\"2012 Symposium on Photonics and Optoelectronics\",\"volume\":\"3 4\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-05-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 Symposium on Photonics and Optoelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOPO.2012.6271097\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 Symposium on Photonics and Optoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOPO.2012.6271097","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The Influence of Electron-Beam Irradiation on the Characters of GaN-Based Light Emitting Diodes
Light emitting diodes (LEDs) is an important solid-state light source, which has the advantage of long lifetime and low cost. As a semiconductor photoelectric device, the electron-beam irradiation on LEDs brings the deep level defect acting as the compensation of the chemical doping in LEDs. In this paper the influence of low-energy and low-dose electron-beam irradiation on the GaN-based LEDs has been studied. It is observed that the light intensity of irradiated LEDs emitting increases, and the electronic parameters are mainly unchanged. And the electron beam irradiation mechanism of the experiment results are discussed and analyzed.
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