一种紧凑的SOI模型，适用于完全耗尽和部分耗尽的0.25 /spl mu/m SIMOX器件

ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307) Pub Date : 1999-03-15 DOI:10.1109/ICMTS.1999.766248

Ping Chen, Zhihong Liu, C. Yeh, Gang Zhang, K. Nishimura, M. Shimaya, T. Komatsu

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引用次数: 1

摘要

基于Bsim3v3体模型，提出了一个紧凑的SOI MOSFET模型，该模型具有有效衬底偏压和过渡电压概念的新特征，涵盖了从部分耗尽到完全耗尽模式的转变行为，R/sub - out/平滑，增强的冲击电离模型，L/sub - eff/依赖的寄生BJT和自加热。该模型得到的结果与实验I-V、C-V和传播延迟时间数据非常吻合。

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A compact SOI model for fully-depleted and partially-depleted 0.25 /spl mu/m SIMOX devices

A compact SOI MOSFET model based on the Bsim3v3 bulk model with new features of effective substrate bias and transition voltage concepts to cover the transition behavior from partially-depleted to fully-depleted modes, R/sub out/ smoothing, enhanced models for impact ionization, L/sub eff/-dependent parasitic BJT and self-heating is proposed. Results obtained from this model are in excellent agreement with the experimental I-V, C-V and propagation-delay time data.

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来源期刊

ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307)

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