Wentao Yang, Hao Feng, Yong Liu, Xiangming Fang, Y. Onozawa, Hiroyuki Tanaka, Kaname Mitsuzuka, J. Sin
{"title":"新型1200v级边缘端接结构,采用沟槽双场板,具有高dV/dt性能","authors":"Wentao Yang, Hao Feng, Yong Liu, Xiangming Fang, Y. Onozawa, Hiroyuki Tanaka, Kaname Mitsuzuka, J. Sin","doi":"10.23919/ISPSD.2017.7988938","DOIUrl":null,"url":null,"abstract":"In this paper, a new 1200 V-class edge termination structure with trench double field plates is proposed and experimentally demonstrated. The double field plates are buried inside the trench. One of the field plates is for modulating electric field distributions along the trench and shifting the breakdown point to the active region for achieving the ideal planar junction breakdown voltage, and the other one is for stopping the depletion region extension at the right side of the trench to achieve high dV/dt performance. The fabricated device has a breakdown voltage of 1422 V which is verified as the ideal planar junction breakdown voltage. Furthermore, it is with a record-short edge termination length of 78 μm which is less than one-fifth of conventional guard ring approaches. Besides, it can handle a high dV/dt value of 73 kV/μs even at a bus voltage of 1400 V.","PeriodicalId":202561,"journal":{"name":"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A new 1200 V-class edge termination structure with trench double field plates for high dV/dt performance\",\"authors\":\"Wentao Yang, Hao Feng, Yong Liu, Xiangming Fang, Y. Onozawa, Hiroyuki Tanaka, Kaname Mitsuzuka, J. Sin\",\"doi\":\"10.23919/ISPSD.2017.7988938\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a new 1200 V-class edge termination structure with trench double field plates is proposed and experimentally demonstrated. The double field plates are buried inside the trench. One of the field plates is for modulating electric field distributions along the trench and shifting the breakdown point to the active region for achieving the ideal planar junction breakdown voltage, and the other one is for stopping the depletion region extension at the right side of the trench to achieve high dV/dt performance. The fabricated device has a breakdown voltage of 1422 V which is verified as the ideal planar junction breakdown voltage. Furthermore, it is with a record-short edge termination length of 78 μm which is less than one-fifth of conventional guard ring approaches. Besides, it can handle a high dV/dt value of 73 kV/μs even at a bus voltage of 1400 V.\",\"PeriodicalId\":202561,\"journal\":{\"name\":\"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/ISPSD.2017.7988938\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/ISPSD.2017.7988938","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new 1200 V-class edge termination structure with trench double field plates for high dV/dt performance
In this paper, a new 1200 V-class edge termination structure with trench double field plates is proposed and experimentally demonstrated. The double field plates are buried inside the trench. One of the field plates is for modulating electric field distributions along the trench and shifting the breakdown point to the active region for achieving the ideal planar junction breakdown voltage, and the other one is for stopping the depletion region extension at the right side of the trench to achieve high dV/dt performance. The fabricated device has a breakdown voltage of 1422 V which is verified as the ideal planar junction breakdown voltage. Furthermore, it is with a record-short edge termination length of 78 μm which is less than one-fifth of conventional guard ring approaches. Besides, it can handle a high dV/dt value of 73 kV/μs even at a bus voltage of 1400 V.