存储器中的FinFET技术分析

2012 IEEE 18th International On-Line Testing Symposium (IOLTS) Pub Date : 2012-06-27 DOI:10.1109/IOLTS.2012.6313866

E. Amat, A. Asenov, R. Canal, B. Cheng, J.-Ll. Cruz, Z. Jaksic, M. Corbalan, A. Rubio, P. Zuber

{"title":"存储器中的FinFET技术分析","authors":"E. Amat, A. Asenov, R. Canal, B. Cheng, J.-Ll. Cruz, Z. Jaksic, M. Corbalan, A. Rubio, P. Zuber","doi":"10.1109/IOLTS.2012.6313866","DOIUrl":null,"url":null,"abstract":"Summary form only given. Due to increased leakage currents and variability, classical bulk technology is reaching its scaling limits and some alternatives must be found. FinFETs are one of those alternatives. Through their 3D structure, they achieve better channel control which is the key to scalability. However, some sources of variability still remain. The impact of this technology shift on SRAM and DRAM memories is analyzed in this work.","PeriodicalId":246222,"journal":{"name":"2012 IEEE 18th International On-Line Testing Symposium (IOLTS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Analysis of FinFET technology on memories\",\"authors\":\"E. Amat, A. Asenov, R. Canal, B. Cheng, J.-Ll. Cruz, Z. Jaksic, M. Corbalan, A. Rubio, P. Zuber\",\"doi\":\"10.1109/IOLTS.2012.6313866\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. Due to increased leakage currents and variability, classical bulk technology is reaching its scaling limits and some alternatives must be found. FinFETs are one of those alternatives. Through their 3D structure, they achieve better channel control which is the key to scalability. However, some sources of variability still remain. The impact of this technology shift on SRAM and DRAM memories is analyzed in this work.\",\"PeriodicalId\":246222,\"journal\":{\"name\":\"2012 IEEE 18th International On-Line Testing Symposium (IOLTS)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE 18th International On-Line Testing Symposium (IOLTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IOLTS.2012.6313866\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE 18th International On-Line Testing Symposium (IOLTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IOLTS.2012.6313866","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

只提供摘要形式。由于泄漏电流和可变性的增加，传统的体块技术已经达到了极限，必须找到一些替代方案。finfet就是其中一种选择。通过它们的三维结构，它们实现了更好的通道控制，这是可扩展性的关键。然而，一些可变性的来源仍然存在。这项工作分析了这种技术转变对SRAM和DRAM存储器的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Analysis of FinFET technology on memories

Summary form only given. Due to increased leakage currents and variability, classical bulk technology is reaching its scaling limits and some alternatives must be found. FinFETs are one of those alternatives. Through their 3D structure, they achieve better channel control which is the key to scalability. However, some sources of variability still remain. The impact of this technology shift on SRAM and DRAM memories is analyzed in this work.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2012 IEEE 18th International On-Line Testing Symposium (IOLTS)

自引率

0.00%

发文量