新一代光子系统的VCSEL设计

2021 26th Microoptics Conference (MOC) Pub Date : 2021-09-26 DOI:10.23919/MOC52031.2021.9598155

D. Bimberg

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引用次数: 0

摘要

本文报道了850 - 1310nm用于数据通信和汽车应用的基于gaas的VCSEL和VCSEL阵列的几种新设计方法。它们基于优化光子寿命和氧化先前蚀刻孔的孔径。建议使用量子点作为较长波长的活性物质。

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Novel VCSEL Designs for the next generation of photonic systems

Several novel approaches for the design of GaAs-based VCSELs and VCSEL arrays for data com and automotive applications at 850–1310 nm are reported. They are based on optimising the photon lifetime and oxidizing the apertures from previously etched holes. Using QDs as active material at longer wavelengths is suggested.

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2021 26th Microoptics Conference (MOC)

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