同时采用二阶和三阶失真消除的宽带无电感LNA

O. Najari, T. Arnborg, A. Alvandpour
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引用次数: 7

摘要

本文提出了一种宽带无电感低噪声放大器(LNA),该放大器采用一种同时抵消二阶和三阶互调产物的技术,从而在射频和微波频率下实现高二阶和三阶输入截距点(IIP2和IIP3)。LNA还利用消噪级在全带宽内实现低噪声特性和低噪声系数。LNA采用90纳米CMOS工艺设计,包括分流反馈共源输入级,用于提供宽带输入阻抗匹配,然后是降噪级。共源输入级采用两个晶体管并联在不同的工作区域进行失真消除。所设计LNA的IIP2和IIP3分别为+41dBm和+2.4dBm。该LNA在500MHz-5GHz范围内实现了17dB的电压增益,噪声系数低于2dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Wideband inductorless LNA employing simultaneous 2nd and 3rd order distortion cancellation
This paper presents a wideband inductorless Low Noise Amplifier (LNA) using a technique for canceling 2nd and 3rd order intermodulation products at the same time and hence achieving high second and third order Input Intercept Point (IIP2 and IIP3) at RF and microwave frequencies. The LNA also makes use of noise canceling stage to achieve low noise characteristics and low noise figure in the whole bandwidth. The LNA was designed in 90-nm CMOS process and consists of a shunt feedback common-source input stage to provide wideband input impedance matching, followed by a noise canceling stage. The common source input stage employs two transistors in parallel biased at different operating regions which perform distortion cancellation. IIP2 and IIP3 of the designed LNA are +41dBm and +2.4dBm respectively. The LNA achieved the voltage gain of 17dB while having the noise figure below 2dB from 500MHz–5GHz.
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