低饱和起始MOS晶体管:等效网络

2019 34th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2019-08-01 DOI:10.1109/SBMicro.2019.8919312

Adson Alves Fernandes, F. Andrade, Antonio José Sobrinho de Sousa, Gabriele Costa Goncalves, E. Santana, M. D. Pereira, A. Cunha

{"title":"低饱和起始MOS晶体管:等效网络","authors":"Adson Alves Fernandes, F. Andrade, Antonio José Sobrinho de Sousa, Gabriele Costa Goncalves, E. Santana, M. D. Pereira, A. Cunha","doi":"10.1109/SBMicro.2019.8919312","DOIUrl":null,"url":null,"abstract":"In this work a four-transistor network is presented which is almost equivalent to a single transistor with lower saturation onset voltage. Output characteristics are analyzed and the reduction on saturation onset voltage is assessed. This network is adequate to replace output transistors in cascode mirrors, so that the low output conductance is achieved with much less prejudice to output voltage swing.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"15 3","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Low Saturation Onset MOS Transistor: an Equivalent Network\",\"authors\":\"Adson Alves Fernandes, F. Andrade, Antonio José Sobrinho de Sousa, Gabriele Costa Goncalves, E. Santana, M. D. Pereira, A. Cunha\",\"doi\":\"10.1109/SBMicro.2019.8919312\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work a four-transistor network is presented which is almost equivalent to a single transistor with lower saturation onset voltage. Output characteristics are analyzed and the reduction on saturation onset voltage is assessed. This network is adequate to replace output transistors in cascode mirrors, so that the low output conductance is achieved with much less prejudice to output voltage swing.\",\"PeriodicalId\":403446,\"journal\":{\"name\":\"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)\",\"volume\":\"15 3\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SBMicro.2019.8919312\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SBMicro.2019.8919312","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

在这项工作中，提出了一个几乎相当于单晶体管的四晶体管网络，具有较低的饱和起始电压。分析了输出特性，并对饱和起始电压的降低进行了评估。该网络足以取代级联镜中的输出晶体管，从而实现低输出电导，而对输出电压摆动的影响要小得多。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Low Saturation Onset MOS Transistor: an Equivalent Network

In this work a four-transistor network is presented which is almost equivalent to a single transistor with lower saturation onset voltage. Output characteristics are analyzed and the reduction on saturation onset voltage is assessed. This network is adequate to replace output transistors in cascode mirrors, so that the low output conductance is achieved with much less prejudice to output voltage swing.

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2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)

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