多晶硅TFTs中用于几何效应消除和阱态密度提取的电荷泵送技术的优化

2008 9th International Conference on Solid-State and Integrated-Circuit Technology Pub Date : 2008-12-30 DOI:10.1109/ICSICT.2008.4734707

Lei Lu, Mingxiang Wang, M. Wong

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引用次数: 0

摘要

通过考虑脉冲波形及其跃迁时间，优化了电荷泵浦(CP)技术，使多晶硅TFTs中CP电流中的几何分量最小化。在此基础上，得到了与mosfet相似的理想CP曲线。多晶硅TFTs的陷阱态密度的重要信息，即平均值以及带隙内的能量分布，可以通过不同的方法可靠地提取出来。

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Optimization of charge pumping technique in polysilicon TFTs for geometric effect elimination and trap state density extraction

Charge pumping (CP) technique is optimized to minimize the geometric component in the CP current in polysilicon TFTs, by taking into account the pulse waveform and its transition times. Based on the optimization, ideal CP curves similar to those in MOSFETs are obtained. Important information on the trap state density of polysilicon TFTs, i.e., the mean value as well as the energy distribution within the band-gap, can be reliably extracted in different ways.

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2008 9th International Conference on Solid-State and Integrated-Circuit Technology

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