石墨烯薄膜应变场的表征

2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS) Pub Date : 2012-03-05 DOI:10.1109/NEMS.2012.6196712

Raden Dewanto, C. Dale, Zhongxu Hu, N. Keegan, B. Gallacher, J. Hedley

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引用次数: 0

摘要

本文报道了石墨烯薄膜中应变引起的拉曼位移。与硅衬底的521cm-1特征峰相比，石墨烯的D、G和2D峰的位移之间存在直接相关性。结果表明，该方法适用于负载条件下石墨烯拉曼光谱的表征。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Characterization of strain fields in graphene films

This paper reports on the Raman shifts corresponding to strain induced in graphene films. A direct correlation is demonstrated between the shifts in the D, G and 2D peaks of graphene compared to the characteristic 521cm-1 peak of the underlying silicon substrate. The approach is shown to be suitable for characterizing the graphene Raman spectrum under load conditions.

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来源期刊

2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)

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