{"title":"理论分析了热电半导体晶体材料的优劣图","authors":"L. Bulat, V. Zakordonets","doi":"10.1109/ICT.1996.553294","DOIUrl":null,"url":null,"abstract":"The thermoelectric figure of merit z is computed for bipolar semiconducting materials with a degenerate gas of current carriers and a nonparabolic band structure. The factors that affect the value of z are analyzed. It is established that the figure of merit of such materials increases monotonically with increasing band gap, in contrast with semiconductors with a parabolic band. It is shown that zT<3 is always true in crystalline thermoelectric materials.","PeriodicalId":447328,"journal":{"name":"Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1996-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"The theoretical analysis of the thermoelectric semiconducting crystalline materials figure of merit\",\"authors\":\"L. Bulat, V. Zakordonets\",\"doi\":\"10.1109/ICT.1996.553294\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The thermoelectric figure of merit z is computed for bipolar semiconducting materials with a degenerate gas of current carriers and a nonparabolic band structure. The factors that affect the value of z are analyzed. It is established that the figure of merit of such materials increases monotonically with increasing band gap, in contrast with semiconductors with a parabolic band. It is shown that zT<3 is always true in crystalline thermoelectric materials.\",\"PeriodicalId\":447328,\"journal\":{\"name\":\"Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-03-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICT.1996.553294\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICT.1996.553294","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The theoretical analysis of the thermoelectric semiconducting crystalline materials figure of merit
The thermoelectric figure of merit z is computed for bipolar semiconducting materials with a degenerate gas of current carriers and a nonparabolic band structure. The factors that affect the value of z are analyzed. It is established that the figure of merit of such materials increases monotonically with increasing band gap, in contrast with semiconductors with a parabolic band. It is shown that zT<3 is always true in crystalline thermoelectric materials.
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