通道长度缩放对RMG Si - p- finet中NBTI影响的建模

2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2018-09-01 DOI:10.1109/SISPAD.2018.8551740

N. Parihar, R. Tiwari, S. Mahapatra

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引用次数: 15

摘要

对替代金属栅极(RMG)和高k金属栅极(HKMG) p沟道finfet的负偏置温度不稳定性(NBTI)应力和恢复时间动力学进行了测量和建模。分析了通道长度(L)缩放对阈值电压($\mathrm{V}_{T})$、其幂律时间指数(n)、电压加速因子(VAF)和温度(T)激活$(\mathrm{E}_{A})$移位的影响。利用TCAD和能带结构计算来解释实验数据的L依赖性。

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Modeling Channel Length Scaling Impact on NBTI in RMG Si p-FinFETs

Negative Bias Temperature Instability (NBTI) stress and recovery time kinetics fromReplacement Metal Gate (RMG) High-K Metal Gate (HKMG) p-channel FinFETs are measured and modeled. The impact of channel length (L) scaling on shift in threshold voltage ($\mathrm{V}_{T})$,its power-law time exponent (n), Voltage Acceleration Factor (VAF) and Temperature (T) activation $( \mathrm{E}_{A})$ is analyzed. TCAD and band structure calculations are utilized to explain the L dependence of experimental data.

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2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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