基于130nm BiCMOS的180ghz和205ghz双频段中功率高增益放大器

2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON) Pub Date : 2016-05-09 DOI:10.1109/MIKON.2016.7492052

J. Leufker, D. Fritsche, G. Tretter, C. Carta, F. Ellinger

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引用次数: 2

摘要

本文介绍了一种双频中功率放大器的设计、实现和特性。电路由三个级联级联码级组成。为了使放大器的总带宽最大化，设计了在两个相邻频带中运行的级间匹配网络。采用屏蔽微带和零欧姆传输线确保精确匹配。该放大器在180 GHz时的功率增益为23.7 dB, 3db带宽为17.2 GHz;在205 GHz时的功率增益为20.2 dB, 3db带宽超过22.8 GHz。在170 GHz时，1db增益压缩时的最大输出功率为2.2 dBm，而在180 GHz时，最大测量输出功率为3.6dBm。该电路需要来自2.5V电源的24mA，并在0.4mm2的130nm SiGe BiCMOS技术上制造。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Dualband 180 GHz and 205 GHz medium-power high-gain amplifier on 130 nm BiCMOS

This paper describes the design, implementation and characterization of a dual-band medium-power amplifier. The circuit consists of three cascaded cascode stages. With the aim of maximizing the overall amplifier bandwidth, the inter-stage matching networks are designed for operation in two adjacent bands. Shielded microstrips and zero-Ohm transmission lines were used to ensure precise matching. The amplifier provides a power gain of 23.7 dB at 180 GHz with a 3 dB bandwidth of 17.2 GHz and a power gain of 20.2 dB at 205 GHz with a 3 dB bandwidth of more than 22.8 GHz. The maximum output power at 1 dB gain compression is 2.2 dBm at 170 GHz while the maximum measured output power is 3.6dBm at 180 GHz. The circuit requires 24mA from a 2.5V supply source and has been fabricated on 0.4mm2 of a 130nm SiGe BiCMOS technology.

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来源期刊

2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON)

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