65纳米CMOS相控阵雷达系统ka波段低噪声放大器

2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) Pub Date : 2019-06-12 DOI:10.1109/EDSSC.2019.8754111

Mengdi Cao, Luqiang Duan, Guopei Chen, Ruichang Ma, Zhiyuan Chen, B. Chi

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引用次数: 0

摘要

提出了一种用于相控阵雷达系统的优化ka波段低噪声放大器。定量分析了两种增益增强技术，并将其应用于所提出的LNA，以实现高增益和低噪声的性能。同时，为了防止中心频率(35GHz)随PVT变化而漂移，还插入了三个开关电容阵列。该LNA采用65nm CMOS实现，在7GHz-3dB带宽(BW-3dB)上具有26.2dB增益，同时从1V电源获取24.5mA电流。35GHz时噪声系数小于3.4dB。S11和S22在整个工作频段(33GHz-37GHz)内低于-10dB。输入三阶截距点(IIP3)大于-22dBm。

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A Ka-Band Low Noise Amplifier for Phased Array Radar System in 65nm CMOS

An optimized Ka-band low noise amplifier (LNA) for phased array radar system is presented in this paper. Two gain-boosting techniques are quantitatively analyzed and employed on the proposed LNA to achieve high gain and low noise performances. Meanwhile, three switched-capacitor arrays are inserted to prevent the center frequency (35GHz) from shifting with the PVT variations. Implemented in 65nm CMOS, the presented LNA features 26.2dB gain over 7GHz-3dB bandwidth (BW-3dB) while drawing 24.5mA current from one 1V power supply. The noise figure (NF) is lower than 3.4dB at 35GHz. S11 and S22 are below -10dB within the entire operating frequency band (33GHz-37GHz). The input third-order intercept point (IIP3) is higher than -22dBm.

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来源期刊

2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

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