nmosfet的温度和窄通道依赖阈值电压模型的实现

The 4th Joint International Conference on Information and Communication Technology, Electronic and Electrical Engineering (JICTEE) Pub Date : 2014-03-05 DOI:10.1109/JICTEE.2014.6804064

A. Ruangphanit, N. Sakuna, Niemcharoen, B. Phinyo, R. Muanghlua

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引用次数: 3

摘要

本文在spice level 3和BSIM3的基础上，提出了一种新的简化温度失配和窄通道依赖阈值电压的NMOS。在线性区域采用不同通道宽度的IDS -VGS。参数提取过程是基于对线性区MOSFET跨导特性的测量。在该模型中，确定了大MOSFET和窄通道宽度MOSFET阈值电压的温度系数和体偏置系数。结果表明，阈值电压预测值与实验值的偏差小于5%。

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Implementation of the temperature and narrow channel dependence on threshold voltage model of NMOSFETs

In this paper, a new simplify mismatch of temperature and narrow channel dependence of threshold voltage of NMOS developed from spice level 3 and BSIM3 are proposed. The IDS -VGS in linear region was used with a different channel width. The parameters extraction procedure is based on the measurement of the transconductance characteristics of MOSFET in linear region. In this model, the temperature coefficient for threshold voltage and the body-bias coefficient of threshold voltage of a big MOSFET and a narrow channel width of MOSFET are determined. The results show that, the deviation of threshold voltage from the predicted model compared with the experimental data is less than 5%.

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The 4th Joint International Conference on Information and Communication Technology, Electronic and Electrical Engineering (JICTEE)

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