{"title":"FMCW雷达x波段硅集成收发器模块设计","authors":"R. Piesiewicz","doi":"10.1109/MIXDES.2015.7208533","DOIUrl":null,"url":null,"abstract":"In this paper design of critical building blocks of a 10 GHz silicon integrated circuit of an FMCW radar transceiver is reported. Specifically, design of VCO and LNA is discussed. The targeted transceiver structure will be world's first, commercially available silicon integrated circuit built in SiGe BiCMOS technology and dedicated for low-power radar applications.","PeriodicalId":188240,"journal":{"name":"2015 22nd International Conference Mixed Design of Integrated Circuits & Systems (MIXDES)","volume":"27 2","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design of building blocks of an X-band silicon integrated transceiver for FMCW radar\",\"authors\":\"R. Piesiewicz\",\"doi\":\"10.1109/MIXDES.2015.7208533\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper design of critical building blocks of a 10 GHz silicon integrated circuit of an FMCW radar transceiver is reported. Specifically, design of VCO and LNA is discussed. The targeted transceiver structure will be world's first, commercially available silicon integrated circuit built in SiGe BiCMOS technology and dedicated for low-power radar applications.\",\"PeriodicalId\":188240,\"journal\":{\"name\":\"2015 22nd International Conference Mixed Design of Integrated Circuits & Systems (MIXDES)\",\"volume\":\"27 2\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-06-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 22nd International Conference Mixed Design of Integrated Circuits & Systems (MIXDES)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MIXDES.2015.7208533\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 22nd International Conference Mixed Design of Integrated Circuits & Systems (MIXDES)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIXDES.2015.7208533","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design of building blocks of an X-band silicon integrated transceiver for FMCW radar
In this paper design of critical building blocks of a 10 GHz silicon integrated circuit of an FMCW radar transceiver is reported. Specifically, design of VCO and LNA is discussed. The targeted transceiver structure will be world's first, commercially available silicon integrated circuit built in SiGe BiCMOS technology and dedicated for low-power radar applications.