优化了0.1 μ m GaAs MESFET

1992 IEEE Microwave Symposium Digest MTT-S Pub Date : 1992-06-01 DOI:10.1109/MWSYM.1992.188065

K. Moore, J. East, G. Haddad, T. Brock

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引用次数: 1

摘要

作者对传统GaAs mesfet的高频工作设计进行了优化。利用电子束光刻技术制备了场效应管，定义了0.1 μ m的蘑菇和T栅极。获得的最佳结果包括峰值跨导600 mS/mm, f/sub /=93 GHz, f/sub max/>or=150 GHz。此外，还研究了栅极形状和位置对高频器件性能的影响。

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Optimized 0.1 mu m GaAs MESFET's

The authors have optimized the design of conventional GaAs MESFETs for high-frequency operation. FETs were fabricated using electron beam lithography to define 0.1- mu m mushroom and T gates. The best results obtained included peak transconductance of 600 mS/mm, f/sub t/=93 GHz, and f/sub max/>or=150 GHz. In addition, studies were carried out to examine the effect of gate shape and location on high-frequency device performance.<>

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来源期刊

1992 IEEE Microwave Symposium Digest MTT-S

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