{"title":"多层薄膜MCM-D技术中具有传输零点的低损耗耦合线滤波器","authors":"G. Posada, G. Carchon, B. Nauwelaers, W. De Raedt","doi":"10.1109/MWSYM.2004.1338851","DOIUrl":null,"url":null,"abstract":"This paper presents the design and characterization of high-performance bandpass filters with transmission zeros, integrated in a multi-layer thin film MCM-D technology on high-resistivity Si. A mixed thin-film microstrip/coplanar waveguide transmission line has been used for the realization of the filters, as it presents lower loss than thin-film microstrip lines. The coupled line filters achieve an insertion loss of 2.3 dB at 25 GHz and 1.7 dB at 43 GHz with 3 dB bandwidths of 14% and 18% respectively. The use of transmission zeros provides a close in-band attenuation of more than 30 dB. The used topology allows changing the center frequency and the position of the transmission zeros more or less independently facilitating the design.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"53 11","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Low loss coupled line filters with transmission zeros in multi-layer thin film MCM-D technology\",\"authors\":\"G. Posada, G. Carchon, B. Nauwelaers, W. De Raedt\",\"doi\":\"10.1109/MWSYM.2004.1338851\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the design and characterization of high-performance bandpass filters with transmission zeros, integrated in a multi-layer thin film MCM-D technology on high-resistivity Si. A mixed thin-film microstrip/coplanar waveguide transmission line has been used for the realization of the filters, as it presents lower loss than thin-film microstrip lines. The coupled line filters achieve an insertion loss of 2.3 dB at 25 GHz and 1.7 dB at 43 GHz with 3 dB bandwidths of 14% and 18% respectively. The use of transmission zeros provides a close in-band attenuation of more than 30 dB. The used topology allows changing the center frequency and the position of the transmission zeros more or less independently facilitating the design.\",\"PeriodicalId\":334675,\"journal\":{\"name\":\"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)\",\"volume\":\"53 11\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-06-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2004.1338851\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2004.1338851","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low loss coupled line filters with transmission zeros in multi-layer thin film MCM-D technology
This paper presents the design and characterization of high-performance bandpass filters with transmission zeros, integrated in a multi-layer thin film MCM-D technology on high-resistivity Si. A mixed thin-film microstrip/coplanar waveguide transmission line has been used for the realization of the filters, as it presents lower loss than thin-film microstrip lines. The coupled line filters achieve an insertion loss of 2.3 dB at 25 GHz and 1.7 dB at 43 GHz with 3 dB bandwidths of 14% and 18% respectively. The use of transmission zeros provides a close in-band attenuation of more than 30 dB. The used topology allows changing the center frequency and the position of the transmission zeros more or less independently facilitating the design.