离子注入平面砷化镓阻塞杂质带探测器的设计考虑

2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2016-07-11 DOI:10.1109/NUSOD.2016.7547021

Yun Zhang, Xiaodong Wang, B. Wang, Liwei Hou, Xiaoyao Chen, Yawei Kuang, M. Pan

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引用次数: 1

摘要

通过数值模拟设计了平面砷化镓阻塞杂质带(BIB)探测器的离子注入方案。介绍了该器件的结构和制备工艺。结果表明，吸收区和接触区注入的Si离子浓度分别为5×1015 cm-3和4×1019 cm-3，可以通过不同离子能量和剂量的四步注入来实现。

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Design consideration for ion-implanted planar GaAs blocked-impurity-band detectors

Design of ion implantation scheme for the planar GaAs blocked-impurity-band (BIB) detectors is performed by numerical simulation. The device structure and the preparation process are presented. It is demonstrated that the implanted Si ion concentration of the absorbing region and the contact region are 5×10¹⁵ cm^-3 and 4×10¹⁹ cm^-3, respectively, and can be implemented by four-step implantation with different ion energies and doses.

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2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

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