{"title":"硅纳米线mosfet的相关效应","authors":"Changsheng Li, M. Bescond, M. Lannoo","doi":"10.1109/IWCE.2009.5091100","DOIUrl":null,"url":null,"abstract":"We report a numerical study of the self-energy correction due to correlation effects from dynamic screening of the moving electron in silicon nanowire transistors. This many-body effect, which is not included in the usual Hartree approximation, is then incorporated self-consistently into a non-equilibrium Green's function (NEGF) code. The results pinpoint the importance of dielectric confinement whose magnitude can not be neglected compared to its quantum counterpart in ultimate nanowire transistors.","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"74 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Correlation Effects in Silicon Nanowire MOSFETs\",\"authors\":\"Changsheng Li, M. Bescond, M. Lannoo\",\"doi\":\"10.1109/IWCE.2009.5091100\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report a numerical study of the self-energy correction due to correlation effects from dynamic screening of the moving electron in silicon nanowire transistors. This many-body effect, which is not included in the usual Hartree approximation, is then incorporated self-consistently into a non-equilibrium Green's function (NEGF) code. The results pinpoint the importance of dielectric confinement whose magnitude can not be neglected compared to its quantum counterpart in ultimate nanowire transistors.\",\"PeriodicalId\":443119,\"journal\":{\"name\":\"2009 13th International Workshop on Computational Electronics\",\"volume\":\"74 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-05-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 13th International Workshop on Computational Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWCE.2009.5091100\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 13th International Workshop on Computational Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWCE.2009.5091100","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We report a numerical study of the self-energy correction due to correlation effects from dynamic screening of the moving electron in silicon nanowire transistors. This many-body effect, which is not included in the usual Hartree approximation, is then incorporated self-consistently into a non-equilibrium Green's function (NEGF) code. The results pinpoint the importance of dielectric confinement whose magnitude can not be neglected compared to its quantum counterpart in ultimate nanowire transistors.
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