cvd生长MoS2晶体管的制备及电性能

2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC) Pub Date : 2017-10-01 DOI:10.1109/EDSSC.2017.8126502

Ming Wen, Jiqu Xu, L. Liu, Xinyuan Zhao, P. T. Lai, W. Tang

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引用次数: 1

摘要

通过优化生长条件，采用热化学气相沉积(CVD)技术成功生长出6层连续均匀的MoS2薄膜，并将其用作传统光刻工艺制备顶门控晶体管的通道材料。此外，研究了缓冲层对CVD MoS2晶体管电性能的影响，发现Ta2O5作为缓冲层可提高载流子迁移率(0.69 cm2/V·s)。

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Fabrication and electrical performance of CVD-grown MoS2 transistor

A 6-layer continuous and uniform MoS2 film is successfully grown by thermal chemical vapor deposition (CVD) through optimizing its growth conditions, and is used as channel material to fabricate top-gated transistors by conventional lithography process. Also, the effects of a buffer layer on the electrical performance of the CVD MoS2 transistor are investigated, and enhanced carrier mobility (0.69 cm²/V·s) is achieved by using Ta2O5 as the buffer layer.

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来源期刊

2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)

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