{"title":"氮化镓基蓝色激光二极管效率限制的比较分析","authors":"J. Piprek","doi":"10.1109/NUSOD.2016.7546997","DOIUrl":null,"url":null,"abstract":"Nobel laureate Shuji Nakamura predicted in 2014 that GaN-based laser diodes are the future of solid state lighting. However, blue GaN-lasers still exhibit less than 40% power conversion efficiency, while GaN-based blue light-emitting diodes reach up to 84% This paper investigates non-thermal reasons behind this difference by comparative numerical device simulation. Fundamental material properties such as poor hole conductivity and high internal absorption are shown to make GaN-lasers inherently less efficient than GaAs-lasers.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"231 6","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Comparative analysis of efficiency limitations in GaN-based blue laser diodes\",\"authors\":\"J. Piprek\",\"doi\":\"10.1109/NUSOD.2016.7546997\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Nobel laureate Shuji Nakamura predicted in 2014 that GaN-based laser diodes are the future of solid state lighting. However, blue GaN-lasers still exhibit less than 40% power conversion efficiency, while GaN-based blue light-emitting diodes reach up to 84% This paper investigates non-thermal reasons behind this difference by comparative numerical device simulation. Fundamental material properties such as poor hole conductivity and high internal absorption are shown to make GaN-lasers inherently less efficient than GaAs-lasers.\",\"PeriodicalId\":425705,\"journal\":{\"name\":\"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)\",\"volume\":\"231 6\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-07-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NUSOD.2016.7546997\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD.2016.7546997","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Comparative analysis of efficiency limitations in GaN-based blue laser diodes
Nobel laureate Shuji Nakamura predicted in 2014 that GaN-based laser diodes are the future of solid state lighting. However, blue GaN-lasers still exhibit less than 40% power conversion efficiency, while GaN-based blue light-emitting diodes reach up to 84% This paper investigates non-thermal reasons behind this difference by comparative numerical device simulation. Fundamental material properties such as poor hole conductivity and high internal absorption are shown to make GaN-lasers inherently less efficient than GaAs-lasers.