LDMOS的能量能力随环境温度的变化

2012 13th International Conference on Ultimate Integration on Silicon (ULIS) Pub Date : 2012-03-06 DOI:10.1109/ULIS.2012.6193358

A. Basavalingappa, Anumeha, G. Sheu

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引用次数: 1

摘要

LDMOS器件结构的能量能力与环境温度呈非线性关系。讨论了能量能力的分析模型，与仿真结果吻合较好。给出了临界温度与环境温度的关系。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Energy capability of LDMOS as a function of ambient temperature

Energy capability of a LDMOS device structure is shown to have nonlinear relationship with ambient temperature. Analytical model for energy capability has been discussed and is in good agreement with the simulation results. The dependency of critical temperature on ambient temperature is shown.

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2012 13th International Conference on Ultimate Integration on Silicon (ULIS)

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