Deewakar Poudel, Benjamin Belfore, Adam Masters, A. Rockett, S. Marsillac
{"title":"金属卤化物处理对高通量低温CIGS太阳能电池的影响","authors":"Deewakar Poudel, Benjamin Belfore, Adam Masters, A. Rockett, S. Marsillac","doi":"10.1109/PVSC48317.2022.9938873","DOIUrl":null,"url":null,"abstract":"Copper indium gallium diselenide (CIGS) semiconductor thin films were deposited at high rate and low temperature using single-stage thermal co-evaporation process on molybdenum back contact. A post deposition treatment was done by flashing AgBr at 350 °C to induce recrystallization. Changes in morphology were confirmed by SEM, with an observed increase in grain size, as well as by XRD measurements, with a decrease in FWHM. Device results show an improvement of the performance after the AgBr vapor treatment, as all the photovoltaic parameters enhanced. Overall, AgBr seems to be a suitable transport agent and beneficial for device fabrication.","PeriodicalId":435386,"journal":{"name":"2022 IEEE 49th Photovoltaics Specialists Conference (PVSC)","volume":"238 ","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of Metal Halides Treatment on High Throughput Low Temperature CIGS Solar Cells\",\"authors\":\"Deewakar Poudel, Benjamin Belfore, Adam Masters, A. Rockett, S. Marsillac\",\"doi\":\"10.1109/PVSC48317.2022.9938873\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Copper indium gallium diselenide (CIGS) semiconductor thin films were deposited at high rate and low temperature using single-stage thermal co-evaporation process on molybdenum back contact. A post deposition treatment was done by flashing AgBr at 350 °C to induce recrystallization. Changes in morphology were confirmed by SEM, with an observed increase in grain size, as well as by XRD measurements, with a decrease in FWHM. Device results show an improvement of the performance after the AgBr vapor treatment, as all the photovoltaic parameters enhanced. Overall, AgBr seems to be a suitable transport agent and beneficial for device fabrication.\",\"PeriodicalId\":435386,\"journal\":{\"name\":\"2022 IEEE 49th Photovoltaics Specialists Conference (PVSC)\",\"volume\":\"238 \",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE 49th Photovoltaics Specialists Conference (PVSC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC48317.2022.9938873\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE 49th Photovoltaics Specialists Conference (PVSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC48317.2022.9938873","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of Metal Halides Treatment on High Throughput Low Temperature CIGS Solar Cells
Copper indium gallium diselenide (CIGS) semiconductor thin films were deposited at high rate and low temperature using single-stage thermal co-evaporation process on molybdenum back contact. A post deposition treatment was done by flashing AgBr at 350 °C to induce recrystallization. Changes in morphology were confirmed by SEM, with an observed increase in grain size, as well as by XRD measurements, with a decrease in FWHM. Device results show an improvement of the performance after the AgBr vapor treatment, as all the photovoltaic parameters enhanced. Overall, AgBr seems to be a suitable transport agent and beneficial for device fabrication.
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