基于堆叠技术的浮动N+扩散区ESD保护器件light的研究

2020 International Conference on Electronics, Information, and Communication (ICEIC) Pub Date : 2020-01-01 DOI:10.1109/ICEIC49074.2020.9051054

Kyoung-Il Do, Byung-Suk Lee, Jeong-Ju Seo, Je-Wook Woo, Yong-Seo Koo

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引用次数: 1

摘要

在本文中，我们提出了一种基于堆叠技术的横向绝缘栅双极晶体管(light)的静电放电保护器件。这种新型ESD浪涌保护装置在传统light结构的N井中插入一个浮动N +区域，以提供低触发电压和高保持电压。此外，通过增加触发电压和保持电压，堆栈技术可以应用于需要更高电压的应用中。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A Study on the ESD Protection Device LIGBT with Floating N+ Diffusion Region Using Stack Technology

In this paper, we propose a Lateral insulated-gate bipolar transistor (LIGBT) based device using stack technology for electrostatic discharge (ESD) protection. This new ESD surge protection device inserts a floating N + region into the N-Well of a conventional LIGBT structure to provide a low trigger voltage and a high holding voltage. In addition, the stack technology makes it possible to apply in applications requiring higher voltages by increasing the trigger voltage and holding voltage.

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来源期刊

2020 International Conference on Electronics, Information, and Communication (ICEIC)

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