InGaAs/InGaAsP量子阱的相互扩散

1993 (5th) International Conference on Indium Phosphide and Related Materials Pub Date : 1993-04-19 DOI:10.1109/ICIPRM.1993.380718

R. Glew

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引用次数: 3

摘要

作者研究了砷化镓阱与砷化镓势垒间的相互扩散随磷化氢压力和砷化镓压力的变化。探讨了应变和衬底蚀刻坑密度的影响。无论生长在低或高蚀刻坑密度的衬底上，非应变和应变量子阱的互扩散速率是相似的。相互扩散机制已被证明不是由V族空位引起的

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Interdiffusion of InGaAs/InGaAsP quantum wells

The author studied the interdiffusion between the InGaAs wells and InGaAs barriers as a function of phosphine and arsine pressure. The effect of strain and substrate etch pit density was explored. The interdiffusion rates for unstrained and strained quantum wells were similar, whether grown on low or high etch pit density substrates. The interdiffusion mechanism has been shown to be not due to the group V vacancies.<>

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来源期刊

1993 (5th) International Conference on Indium Phosphide and Related Materials

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