一种40nm低电压CMOS自偏置连续时间比较器,在1.1V和1.2mW时具有低于100ps的延迟

V. Milovanovic, H. Zimmermann
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引用次数: 5

摘要

一个由前置放大器锁存级联组成的全差分连续时间比较器,在1.1V电源和1.2mW功耗下,在50mVpp时实现99 ps的传播延迟,在100mVpp时实现74 ps的传播延迟。比较器是完全自偏的,因此减少了PVT变化的影响,消除了对电压基准的需要。通过自偏置和电源电压缩放的数字可编程性,支持动态延迟电源管理。该设计采用40 nm LP CMOS工艺,占地0.0007mm2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 40 nm LP CMOS self-biased continuous-time comparator with sub-100ps delay at 1.1V & 1.2mW
A fully differential continuous-time comparator, that consists of a preamplifier-latch cascade, achieves propagation delays of 99 ps for a 50mVpp and 74 ps for a 100mVpp input signal amplitude under 1.1V supply and 1.2mW power consumption. The comparator is completely self-biased thus reducing influence of PVT variations and eliminating the need for a voltage reference. Dynamic delay-power management is supported through digital programmability of the self-biasing and supply voltage scaling. The design occupies 0.0007mm2 in 40 nm LP CMOS process.
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