PC, PMMA和SU-8聚合物的CMP

Z. Zhong, Z. Wang, B. Zirajutheen, Y. Tan, Y. Tan
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引用次数: 4

摘要

聚合物如PC(聚碳酸酯),PMMA(聚甲基丙烯酸甲酯)和SU-8环氧树脂正在取代硅作为微流体系统(或生物机械系统)制造的主要衬底。化学机械抛光(CMP)是许多先进微机电系统(MEMS)和微光电系统应用的一项重要技术。本研究研究了PC、PMMA和SU-8聚合物的CMP。对四种浆料进行了PC和PMMA的CMP测试。然后设计并进行了实验,以研究两个关键工艺参数的影响。实验结果表明,水头负荷或工作台转速的增加都会导致材料去除率的增加。在选定的实验参数范围内,表转速的变化比水头负荷的变化更显著。方差分析发现,机头负荷和工作台速度的交互作用对抛光PMMA样品的表面光洁度有显著影响(95%置信度),而工作台速度对抛光PC样品的表面光洁度有显著影响。CMP也是一种非常适合抛光高纵横比SU-8结构的工艺。抛光PC, PMMA和SU-8表面具有纳米级表面粗糙度,可接受大多数MEMS应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
CMP of PC, PMMA and SU-8 Polymers
Polymers such as PC (polycarbonate), PMMA (poly methyl methacryate) and SU-8 epoxy resin are replacing silicon as the major substrate in microfluidic system (or BioMEMS) fabrication. Chemical mechanical polishing (CMP) is an important technology for many advanced microelectromechanical system (MEMS) and micro-optoelectromechanical system applications. In this study, CMP of PC, PMMA and SU-8 polymers was investigated. Four types of slurry were tested for CMP of PC and PMMA. Experiments were then designed and performed to investigate effects of two key process parameters. The experimental results show that an increase in head load or table speed would cause an increase in material removal rates (MRRs). Within the chosen experimental parameter ranges, the variation of table speed introduced a more significant change in MRRs than that of head load. ANOVA was also carried out, and it was found that the interaction of head load and table speed had a significant (95% confidence) effect on surface finish of polished PMMA samples while table speed had a significant effect on surface finish of polished PC samples. CMP is also a process well suited for polishing high-aspect-ratio SU-8 structures. Polished PC, PMMA and SU-8 surfaces had nanometer-order surface roughness, acceptable to most MEMS applications.
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