高压应用的键合SOI技术

8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings Pub Date : 1996-05-20 DOI:10.1109/ISPSD.1996.509446

T. Abe, M. Katayama

{"title":"高压应用的键合SOI技术","authors":"T. Abe, M. Katayama","doi":"10.1109/ISPSD.1996.509446","DOIUrl":null,"url":null,"abstract":"A survey is presented of bonded SOI (BSOI) applications utilizing silicon layers of thickness from 0.1 /spl mu/m to 60 /spl mu/m. Description of the fabrication process and properties of standard BSOI is given. For high voltage applications,the various bonded structures and material issues are described and compared to SIMOX (separation by implanted oxygen). New thinning technologies for ultra-thin SOI (<0.1 /spl mu/m) including recently developed method for separation at an implanted plane are briefly discussed.","PeriodicalId":377997,"journal":{"name":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","volume":"77 5","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Bonded SOI technologies for high voltage applications\",\"authors\":\"T. Abe, M. Katayama\",\"doi\":\"10.1109/ISPSD.1996.509446\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A survey is presented of bonded SOI (BSOI) applications utilizing silicon layers of thickness from 0.1 /spl mu/m to 60 /spl mu/m. Description of the fabrication process and properties of standard BSOI is given. For high voltage applications,the various bonded structures and material issues are described and compared to SIMOX (separation by implanted oxygen). New thinning technologies for ultra-thin SOI (<0.1 /spl mu/m) including recently developed method for separation at an implanted plane are briefly discussed.\",\"PeriodicalId\":377997,\"journal\":{\"name\":\"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings\",\"volume\":\"77 5\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-05-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1996.509446\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1996.509446","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

介绍了利用厚度从0.1 /spl mu/m到60 /spl mu/m的硅层的键合SOI (BSOI)应用。介绍了标准BSOI的制备工艺和性能。对于高压应用，描述了各种键合结构和材料问题，并与SIMOX(通过植入氧气分离)进行了比较。简要讨论了超薄SOI (<0.1 /spl mu/m)的新稀释技术，包括最近开发的植入平面分离方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Bonded SOI technologies for high voltage applications

A survey is presented of bonded SOI (BSOI) applications utilizing silicon layers of thickness from 0.1 /spl mu/m to 60 /spl mu/m. Description of the fabrication process and properties of standard BSOI is given. For high voltage applications,the various bonded structures and material issues are described and compared to SIMOX (separation by implanted oxygen). New thinning technologies for ultra-thin SOI (<0.1 /spl mu/m) including recently developed method for separation at an implanted plane are briefly discussed.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings

自引率

0.00%

发文量