{"title":"具有良好高温性能的全剂量辐射硬化MOSFET","authors":"Jianbing Cheng, Bo Zhang, Zhaoji Li","doi":"10.1109/ICCCAS.2007.4348274","DOIUrl":null,"url":null,"abstract":"Total dose radiation hardened partial silicon-on-insulator (PSOI) MOSFET structure is proposed in this paper. Radiation effects of SOI and PSOI MOSFET are discussed and compared. Simulation results show that the subthreshold performance of SOI MOSFET is significantly deteriorated even under low radiation dose. But the total dose radiation tolerance of PSOI MOSFET is superior to its conventional SOI counterpart under the same radiation dose. Additionally, the influence of transistor's physical parameters on total dose radiation is analyzed. The tolerance is enhanced with the increase of the PSOI silicon window length when the devices are under high total dose conditions. Furthermore, PSOI MOSFET performs better than that of SOI MOSFET at high temperature under harsh radiation condition.","PeriodicalId":218351,"journal":{"name":"2007 International Conference on Communications, Circuits and Systems","volume":"22 25","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"The Total Dose Radiation Hardened MOSFET with Good High-temperatue Performance\",\"authors\":\"Jianbing Cheng, Bo Zhang, Zhaoji Li\",\"doi\":\"10.1109/ICCCAS.2007.4348274\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Total dose radiation hardened partial silicon-on-insulator (PSOI) MOSFET structure is proposed in this paper. Radiation effects of SOI and PSOI MOSFET are discussed and compared. Simulation results show that the subthreshold performance of SOI MOSFET is significantly deteriorated even under low radiation dose. But the total dose radiation tolerance of PSOI MOSFET is superior to its conventional SOI counterpart under the same radiation dose. Additionally, the influence of transistor's physical parameters on total dose radiation is analyzed. The tolerance is enhanced with the increase of the PSOI silicon window length when the devices are under high total dose conditions. Furthermore, PSOI MOSFET performs better than that of SOI MOSFET at high temperature under harsh radiation condition.\",\"PeriodicalId\":218351,\"journal\":{\"name\":\"2007 International Conference on Communications, Circuits and Systems\",\"volume\":\"22 25\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-07-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 International Conference on Communications, Circuits and Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCCAS.2007.4348274\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 International Conference on Communications, Circuits and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCCAS.2007.4348274","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The Total Dose Radiation Hardened MOSFET with Good High-temperatue Performance
Total dose radiation hardened partial silicon-on-insulator (PSOI) MOSFET structure is proposed in this paper. Radiation effects of SOI and PSOI MOSFET are discussed and compared. Simulation results show that the subthreshold performance of SOI MOSFET is significantly deteriorated even under low radiation dose. But the total dose radiation tolerance of PSOI MOSFET is superior to its conventional SOI counterpart under the same radiation dose. Additionally, the influence of transistor's physical parameters on total dose radiation is analyzed. The tolerance is enhanced with the increase of the PSOI silicon window length when the devices are under high total dose conditions. Furthermore, PSOI MOSFET performs better than that of SOI MOSFET at high temperature under harsh radiation condition.
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