{"title":"考虑自晶格加热的冲击电离电流模型适用于大块和SOI mosfet","authors":"Chen Weia, Xing-Gui Zhoua, G. H. See","doi":"10.1109/ISDRS.2007.4422304","DOIUrl":null,"url":null,"abstract":"In this paper, the analytical equations for the substrate current in scaled MOSFETs are developed based on energy-balance equation due to non-equilibrium transport, in which the maximum electric field is attributed to the spatially lagging electron temperature behind the local field. To the author's knowledge, this is the first substrate current model with the lattice temperature Tt built in automatically, the excess substrate current phenomenon reported for the SOI MOSFET due to self-lattice heating can be exactly captured by this new substrate current model.","PeriodicalId":379313,"journal":{"name":"2007 International Semiconductor Device Research Symposium","volume":"174 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A new impact ionization current model applicable to both bulk and SOI MOSFETs by considering self-lattice-heating\",\"authors\":\"Chen Weia, Xing-Gui Zhoua, G. H. See\",\"doi\":\"10.1109/ISDRS.2007.4422304\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, the analytical equations for the substrate current in scaled MOSFETs are developed based on energy-balance equation due to non-equilibrium transport, in which the maximum electric field is attributed to the spatially lagging electron temperature behind the local field. To the author's knowledge, this is the first substrate current model with the lattice temperature Tt built in automatically, the excess substrate current phenomenon reported for the SOI MOSFET due to self-lattice heating can be exactly captured by this new substrate current model.\",\"PeriodicalId\":379313,\"journal\":{\"name\":\"2007 International Semiconductor Device Research Symposium\",\"volume\":\"174 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 International Semiconductor Device Research Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISDRS.2007.4422304\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 International Semiconductor Device Research Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDRS.2007.4422304","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new impact ionization current model applicable to both bulk and SOI MOSFETs by considering self-lattice-heating
In this paper, the analytical equations for the substrate current in scaled MOSFETs are developed based on energy-balance equation due to non-equilibrium transport, in which the maximum electric field is attributed to the spatially lagging electron temperature behind the local field. To the author's knowledge, this is the first substrate current model with the lattice temperature Tt built in automatically, the excess substrate current phenomenon reported for the SOI MOSFET due to self-lattice heating can be exactly captured by this new substrate current model.
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