SOI和DSOI中高效亚波长工程表面光栅耦合器

D. Benedikovic, P. Cheben, J. Schmid, Danxia Xu, Shurui Wang, S. Janz, R. Halir, A. Ortega-Moñux, M. Dado
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引用次数: 0

摘要

通过调整光栅辐射角,优化了表面光栅耦合器在任意埋层厚度下的耦合效率。该耦合器采用亚波长结构,允许单蚀刻步骤制造。测量的耦合损耗为-2.16dB, 3dB带宽为64nm,最小特征尺寸为100nm。仿真结果还表明,通过在双SOI (DSOI)晶圆中实现该耦合器,可以实现-0.42dB的超低耦合损耗。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High-efficiency subwavelength-engineered surface grating couplers in SOI and DSOI
The coupling efficiency of a surface grating coupler is optimized for a an arbitrary buried oxide thickness by adjusting the grating radiation angle. The coupler is apodized using a subwavelength structure, allowing a single etch step fabrication. The measured coupling loss is -2.16dB with 3dB bandwidth of 64nm, for a minimum feature size of 100nm. It is also shown by simulations that by implementing this coupler in a double SOI (DSOI) wafer, an ultra-low coupling loss of -0.42dB is achieved.
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