Bipolar transistor application for «on-line» neutron fluence registration

An efficient practical method for bipolar transistor application for neutron fluence registration is presented. The method is focused on neutron fluences damage effect correlation for various sources to reference source. The bipolar transistor connection diagram and an example of device realization based on STM32 microcontroller are described. STM32 is used for providing test signals and parameter registration used for gain factor calculation of bipolar transistors monitor (BTM). The proposed approach allows considering the features of pre-irradiated at reference source BTM and their application as the neutron fluence monitors. These connection diagram and constructive solutions provide “on-line” neutron fluence registration for different sources in terms of reference source as required for radiation tests results verification.