{"title":"一种新型的跨线性原理BiMOS晶体管","authors":"S. Pradeep Kiran, K. Radhakrishna Rao","doi":"10.1109/ICVD.1998.646596","DOIUrl":null,"url":null,"abstract":"A transconductor that exploits the square law relation of the FET in conjunction with the translinear relation for the bipolar transistors is proposed. Linear output is achieved by taking the square root of the drain current. Simulation results of the transconductor are given.","PeriodicalId":139023,"journal":{"name":"Proceedings Eleventh International Conference on VLSI Design","volume":"4 10","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A novel translinear principle based BiMOS transconductor\",\"authors\":\"S. Pradeep Kiran, K. Radhakrishna Rao\",\"doi\":\"10.1109/ICVD.1998.646596\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A transconductor that exploits the square law relation of the FET in conjunction with the translinear relation for the bipolar transistors is proposed. Linear output is achieved by taking the square root of the drain current. Simulation results of the transconductor are given.\",\"PeriodicalId\":139023,\"journal\":{\"name\":\"Proceedings Eleventh International Conference on VLSI Design\",\"volume\":\"4 10\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings Eleventh International Conference on VLSI Design\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICVD.1998.646596\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings Eleventh International Conference on VLSI Design","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICVD.1998.646596","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A novel translinear principle based BiMOS transconductor
A transconductor that exploits the square law relation of the FET in conjunction with the translinear relation for the bipolar transistors is proposed. Linear output is achieved by taking the square root of the drain current. Simulation results of the transconductor are given.
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