VL-CDRAM:可变行大小的缓存dram

Ananth Hegde, N. Vijaykrishnan, M. Kandemir, M. J. Irwin
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引用次数: 7

摘要

许多当前的存储器架构在DRAM存储器中嵌入了SRAM缓存。这些体系结构利用宽的内部数据总线将整个DRAM行传输到内存缓存。但是,应用程序在访问的不同DRAM行之间表现出不同的空间局部性,并且缓冲整个行可能是浪费的。为了适应不断变化的空间局域性,我们提出了一种可变行大小的缓存DRAM (VL-CDRAM),它可以缓冲访问的DRAM行的部分。我们的评估表明,所提出的方法不仅可以有效地降低能耗,而且可以提高各种内存配置的性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
VL-CDRAM: variable line sized cached DRAMs
Many of the current memory architectures embed a SRAM cache within the DRAM memory. These architectures exploit a wide internal data bus to transfer an entire DRAM row to the on-memory cache. However, applications exhibit a varying spatial locality across the different DRAM rows that are accessed and buffering the entire row may be wasteful. In order to adapt to the changing spatial locality, we propose a variable line size cached DRAM (VL-CDRAM) that can buffer portions of an accessed DRAM row. Our evaluation shows that the proposed approach is effective in not only reducing the energy consumption but also in improving the performance across various memory configurations.
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