采用多层石墨烯作为肖特基电极的双波长敏感AlGaN/GaN MISIM紫外传感器

2015 International Conference on Quality in Research (QiR) Pub Date : 2015-08-01 DOI:10.1109/QIR.2015.7374889

Sang-Bum Kang, Chang-Ju Lee, C. Won, Yi-Sak Koo, Jung-Hee Lee, S. Hahm, S. Hong, B. Cho

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引用次数: 1

摘要

我们提出并制作了一种基于五层多层石墨烯的AlGaN/GaN异质结构层的金属-绝缘体-半导体-绝缘体-金属型紫外传感器。它显示了330和365 nm两个清晰的截止波长。与Ni电极相比，它具有极低的漏电流和高的光响应性。

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Double-wavelength sensitive AlGaN/GaN MISIM UV sensor using multi-layer graphene as Schottky electrodes

We proposed and fabricated an AlGaN/GaN hetero-structure layer-based metal-insulator-semiconductor-insulator-metal type UV sensor by using five stacks of multi-layer graphene. It showed two clear cut-off wavelengths at 330 and 365 nm. Compared with that of Ni electrode, it showed very low leakage current and high photo-responsivity.

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2015 International Conference on Quality in Research (QiR)

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