面向设计的cntfet紧凑模型

International Conference on Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006. Pub Date : 2006-10-16 DOI:10.1109/DTIS.2006.1708732

F. Prégaldiny, C. Lallement, J. Kammerer

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引用次数: 48

摘要

本文讨论了一种新兴技术:碳纳米管场效应晶体管(CNTFET)的紧凑建模。本文提出了两种面向设计的紧凑模型，第一种是针对具有经典行为的CNTFET(类mosfet)，第二种是针对具有双极性行为的CNTFET(肖特基势垒CNTFET)。两种模型都进行了精确的数值模拟比较，并在VHDL-AMS中实现

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Design-oriented compact models for CNTFETs

This paper deals with the compact modeling of an emerging technology: the carbon nanotube field-effect transistor (CNTFET). The paper proposed two design-oriented compact models, the first one for CNTFET with a classical behavior (MOSFET-like CNTFET), and the second one for CNTFET with an ambipolar behavior (Schottky-barrier CNTFET). Both models have been compared with exact numerical simulations and then implemented in VHDL-AMS

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来源期刊

International Conference on Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006.

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