{"title":"功率双极晶体管电热特性的建模与仿真","authors":"T. Maurel, R. Bouchakour, C. Lallement","doi":"10.1109/PEDS.1995.404908","DOIUrl":null,"url":null,"abstract":"We have developed a one-dimensional electrothermal model for the bipolar power transistor, implemented in the SABER circuits simulator, in which the device's temperature becomes an interactive variable during the simulation. The accuracy of the model is appreciated with the electrical and thermal characterization of a NPvN power bipolar transistor using the IC-CAP-SABER interface. The internal behavior of the transistor during transients is shown up through a switching simulation.<<ETX>>","PeriodicalId":244042,"journal":{"name":"Proceedings of 1995 International Conference on Power Electronics and Drive Systems. PEDS 95","volume":"58 3","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-02-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Modeling and simulation of the electrothermal behavior of the power bipolar transistor\",\"authors\":\"T. Maurel, R. Bouchakour, C. Lallement\",\"doi\":\"10.1109/PEDS.1995.404908\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have developed a one-dimensional electrothermal model for the bipolar power transistor, implemented in the SABER circuits simulator, in which the device's temperature becomes an interactive variable during the simulation. The accuracy of the model is appreciated with the electrical and thermal characterization of a NPvN power bipolar transistor using the IC-CAP-SABER interface. The internal behavior of the transistor during transients is shown up through a switching simulation.<<ETX>>\",\"PeriodicalId\":244042,\"journal\":{\"name\":\"Proceedings of 1995 International Conference on Power Electronics and Drive Systems. PEDS 95\",\"volume\":\"58 3\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-02-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1995 International Conference on Power Electronics and Drive Systems. PEDS 95\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PEDS.1995.404908\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1995 International Conference on Power Electronics and Drive Systems. PEDS 95","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PEDS.1995.404908","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Modeling and simulation of the electrothermal behavior of the power bipolar transistor
We have developed a one-dimensional electrothermal model for the bipolar power transistor, implemented in the SABER circuits simulator, in which the device's temperature becomes an interactive variable during the simulation. The accuracy of the model is appreciated with the electrical and thermal characterization of a NPvN power bipolar transistor using the IC-CAP-SABER interface. The internal behavior of the transistor during transients is shown up through a switching simulation.<>