{"title":"使用硅丝电荷耦合器件的单电子旋转门","authors":"A. Fujiwara, N. Zimmerman, Y. Ono, Y. Takahashi","doi":"10.1109/ISDRS.2003.1272208","DOIUrl":null,"url":null,"abstract":"This paper reports a quantized current in a Si-wire charge-coupled device (CCD), which simply consists of a Si-wire channel with gates. Based on a simple gate-voltage control of tunnel barriers, current plateaus were observed successfully at 20 K with frequencies up to 100 MHz. SEM observations were made for the fabricated device, it shows that the charge island is mainly coupled to the upper and wide gate.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"85 25","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Single-electron turnstile using Si-wire charge-coupled devices\",\"authors\":\"A. Fujiwara, N. Zimmerman, Y. Ono, Y. Takahashi\",\"doi\":\"10.1109/ISDRS.2003.1272208\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports a quantized current in a Si-wire charge-coupled device (CCD), which simply consists of a Si-wire channel with gates. Based on a simple gate-voltage control of tunnel barriers, current plateaus were observed successfully at 20 K with frequencies up to 100 MHz. SEM observations were made for the fabricated device, it shows that the charge island is mainly coupled to the upper and wide gate.\",\"PeriodicalId\":369241,\"journal\":{\"name\":\"International Semiconductor Device Research Symposium, 2003\",\"volume\":\"85 25\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Semiconductor Device Research Symposium, 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISDRS.2003.1272208\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Semiconductor Device Research Symposium, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDRS.2003.1272208","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Single-electron turnstile using Si-wire charge-coupled devices
This paper reports a quantized current in a Si-wire charge-coupled device (CCD), which simply consists of a Si-wire channel with gates. Based on a simple gate-voltage control of tunnel barriers, current plateaus were observed successfully at 20 K with frequencies up to 100 MHz. SEM observations were made for the fabricated device, it shows that the charge island is mainly coupled to the upper and wide gate.
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