新半导体制造技术中的环境设计

Proceedings of the 2007 IEEE International Symposium on Electronics and the Environment Pub Date : 2007-05-07 DOI:10.1109/ISEE.2007.369373

J. Harland, D. Harman, L. Drago

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引用次数: 2

摘要

在本文中，我们提供了从在200毫米硅片上制造半导体到在300毫米硅片上制造半导体的转变过程中环境性能改善的数据。结论确定了在未来几代制造中继续改善环境的方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Design for Environment in New Semiconductor Manufacturing Technologies

In this paper, we provide data on the environmental performance improvements achieved during the conversion from manufacturing semiconductors on 200 mm silicon wafer to manufacturing on 300 mm. Conclusions identify approaches to continue the environmental improvements in future manufacturing generations.

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Proceedings of the 2007 IEEE International Symposium on Electronics and the Environment

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